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IXTY1R4N120P IXTA1R4N120P
IXTP1R4N120P
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-252 AA Outline
g fs
C iss
C oss
C rss
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
0.8
1.3
666
36
7.6
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 25 Ω (External)
25
27
78
29
ns
ns
ns
ns
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Q g(on)
Q gs
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
24.8
4.4
nC
nC
Dim.
A
Millimeter
Min. Max.
2.19 2.38
Inches
Min. Max.
0.086 0.094
Q gd
12.8
nC
A1
A2
0.89
0
1.14
0.13
0.035
0
0.045
0.005
R thJC
R thCS
TO-220
0.50
1.45 ° C/W
° C/W
b
b1
b2
c
0.64
0.76
5.21
0.46
0.89
1.14
5.46
0.58
0.025
0.030
0.205
0.018
0.035
0.045
0.215
0.023
c1
0.46
0.58
0.018
0.023
Source-Drain Diode
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
I S V GS = 0V
I SM Repetitive, Pulse Width Limited by T JM
V SD I F = I S , V GS = 0V, Note 1
Characteristic Values
Min. Typ. Max.
1.4
4.2
1.5
A
A
V
E
E1
e
e1
H
L
L1
L2
L3
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025 0.040
0.035 0.050
0.100 0.115
t rr
I F = 1.4A, V GS = 0V,-di/dt = 100A/ μ s
V R = 100V
900
ns
TO-220 Outline
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2. On through-hole package, R DS(on) Kelvin test contact
location must be 5mm or less from the package body.
TO-263 Outline
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
Pins:
1 - Gate
3 - Source
2 - Drain
c
c2
D
D1
E
0.40
1.14
8.64
8.00
9.65
0.74
1.40
9.65
8.89
10.41
.016
.045
.340
.280
.380
.029
.055
.380
.320
.405
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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